Tuesday , October 20 2020
SMIC 7nm process breakthrough
SMIC 7nm process breakthrough

SMIC 7nm process breakthrough

SMIC’s N+1 process, known as the benchmark for TSMC’s 7nm process, has recently achieved a new breakthrough.

On the same day that ZTE announced the commercialization of 7nm chips for 5G base stations. SMIC’s second-generation FinFET process also happened to reveal new developments.

On October 11th, IP and custom chip company Core Motion Technology has completed the world’s first chip tape out and test based on SMIC’s FinFET N+1 advanced process. All IP is made in China, and its functions have been tested for the first time.

SMIC 7nm process breakthrough

The so-called completion of chip tape out means that the process technology has a meaningful “yield rate”, and mass production can be attempted. SMIC Hong Kong stocks rose more than 10%, with a turnover of over 900 million Hong Kong dollars.

The successful tape-out is the result of the “strong cooperation” between SMIC and SMIC, which broke the N+1 process bottleneck. Since 2019, SMIC has invested tens of millions in optimized design while SMIC’s N+1 process has yet to mature, and invested its technical team to overcome difficulties throughout the process, successfully helping SMIC to break through the N+1 Process yield bottleneck.

At the end of March this year, SMIC also stated that advanced technology is the focus of SMIC’s development this year. Next, the company will turn to the next generation of technology-N+1 and N+2 generation FinFET process research and development.

The N+1 process is the code name of the second-generation advanced process after SMIC’s first-generation advanced process 14nm mass production. According to reports, compared with 14nm, the N+1 process has a greater breakthrough. The performance is improved by 20%, power consumption is reduced by 57%, and the logic area is reduced by 63%. After N+1, SMIC will also start to develop a higher performance N+2.

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